analog power AM7510C n & p-channel 100-v (d-s) mosfet
v ds (v) i d (a) 4.8 4.4 -2.5 -2.4 symbol nch limit pch limit units v ds 100 -100 v gs 20 20 t a =25c 4.8 -2.5 t a =70c 3.7 -2 pulsed drain current b i dm 20 -15 continuous source current (diode conduction) a i s 3 -2.7 a t a =25c 2.1 2.1 t a =70c 1.3 1.3 operating junction and storage temperature range t j , t stg c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature 100 -100 295 @ v gs = -4.5v t <= 10 sec steady state r ja maximum junction-to-ambient a 72 @ v gs = 5.5v 275 @ v gs = -10v r ds(on) (m) 62 @ v gs = 10v product summary parameter drain-source voltage gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) c/w parameter thermal resistance ratings continuous drain current a i d power dissipation a p d a w -55 to 150 v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits dfn5x6 - 8l ? preliminary 1 publication order number: ds_AM7510C_1a
analog power AM7510C parameter symbol test conditions min typ max unit v ds = v gs , i d = 250 ua (n-ch) 1 v v ds = v gs , i d = -250 ua (p-ch) -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v (n-ch) 1 v ds = -80 v, v gs = 0 v (p-ch) -1 v ds = 5 v, v gs = 10 v (n-ch) 2.4 a v ds = -5 v, v gs = -10 v (p-ch) -1.2 a v gs = 10 v, i d = 3.8 a (n-ch) 62 v gs = 4.5 v, i d = 3.7 a (n-ch) 72 v gs = -10 v, i d = -2 a (p-ch) 275 v gs = -4.5 v, i d = -1.9 a (p-ch) 295 v ds = 15 v, i d = 3.8 a (n-ch) 22 s v ds = -15 v, i d = -2.0 a (p-ch) 20 s i s = 1.5 a, v gs = 0 v (n-ch) 0.7 v i s = -1.3 a, v gs = 0 v (p-ch) 0.8 v total gate charge q g 11 gate-source charge q gs 3.6 gate-drain charge q gd 6.1 total gate charge q g 9 gate-source charge q gs 3.7 gate-drain charge q gd 4.0 turn-on delay time t d(on) 10 rise time t r 12 turn-off delay time t d(off) 53 fall time t f 21 turn-on delay time t d(on) 6 rise time t r 11 turn-off delay time t d(off) 78 fall time t f 51 input capacitance c iss 1122 output capacitance c oss 130 reverse transfer capacitance c rss 82 input capacitance c iss 1222 output capacitance c oss 128 reverse transfer capacitance c rss 63 static electrical characteristics gate-source threshold voltage on-state drain current zero gate voltage drain current p - channel v ds = -50 v, v gs = 4.5 v, i d = -2 a nc n - channel v dd = 50 v, r l = 13.2 , i d = 3.8 a, v gen = 10 v, r gen = 6 ns forward transconductance g fs diode forward voltage v sd dynamic drain-source on-resistance v gs(th) ua p - channel v ds = -15 v, v gs = 0 v, f = 1 mhz pf nc i d(on) i dss r ds(on) m m p - channel v dd = -50 v, r l = 25 , i d = -2 a, v gen = -10 v, r gen = 6 ns n - channel v ds = 15 v, v gs = 0 v, f = 1 mhz pf n - channel v ds = 50 v, v gs = 4.5 v, i d = 3.8 a ? preliminary 2 publication order number: ds_AM7510C_1a
analog power AM7510C 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - n-channel 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0 2 4 6 8 10 rds(on) - on - resistance( ) id - drain current (a) 3.5v 3v 4v,4.5v,6v,8v,10v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.2 0.4 0.6 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5 v,4v 3.5v 3v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c i d = 3.8 a 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz ? preliminary 3 publication order number: ds_AM7510C_1a
analog power AM7510C 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 11. normalized thermal transient junction to ambient typical electrical characteristics - n-channel 8. normalized on-resistance vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = 3.8 a v ds = 50 v 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja r ja = 110 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) ? preliminary 4 publication order number: ds_AM7510C_1a
analog power AM7510C 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - p-channel 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 1 2 3 4 5 rds(on) - on - resistance( ) id - drain current (a) 4v 3.5v 4.5v, 6v,8v,10v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.4 0.8 1.2 1.6 2 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v 4v 3.5v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c i d = - 2.0 a 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz ? preliminary 5 publication order number: ds_AM7510C_1a
analog power AM7510C 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation typical electrical characteristics - p-channel 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = - 2.0 a v ds = - 50 v 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja r ja = 110 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse 0 20 40 60 80 100 120 140 160 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) ? preliminary 6 publication order number: ds_AM7510C_1a
analog power AM7510C package information ? preliminary 7 publication order number: ds_AM7510C_1a
|
